pdfn : % 3.3 3.3-8l jiangsu changjiang electronics technology co., ltd pdfn : % 3.33.3-8l plastic-encapsulate mosfets CJAB35N03 n -channel power mosfet description the CJAB35N03 uses advanced trench technology and design to provide excellent r ds(on) with low gate charge. it can be used in a wide variety of applications features ? high density cell design for ultra low r ds(on) ? fully characterized avalanche voltage and current ? good stability and uniformity with high e as ? excellent package for good heat dissipation ? special process technology for high esd capabilit y applications ? high side switch in pol dc/dc converter ? secondary side synchronous rectifier marking equivalent circuit CJAB35N03 = part no. solid dot=pin1 indicator xxx=date code maximum ratings ( t a =25 unless otherwise noted ) parameter symbol limit unit drain-s ource voltage v ds 30 v gate-so urce voltage v gs 20 v continu ous drain current i d (1) 35 a pulsed d rain current i dm 120 a single pulsed avalanche energy e as (2) 150 mj power d issipation p d 1.5 w thermal resistance from junction to ambient r ja (1) 83.3 /w junction temperature t j 150 storage temperature range t stg -55 ~+150 lead te mperature for soldering purposes(1/8 from case for 10s) t l 260 (1). mo unted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt (2).e as condition: v dd =15v,l=0.1mh, r g =25?, starting t j = 25c g 1 2 3 4 567 8 s s s ddd d www.cj-elec.com 1 a- 6 , oct ,2016 v (br) dss r ds(on) max i d 30 v ? 7m @ 10v ? 35 a 12m @ 4 .5 v ?
parame ter symbol test condition min typ max unit off ch aracteristics drain- source breakdown voltage v (br) dss v gs = 0v, i d =250a 30 v zero g ate voltage drain current i dss v ds =30v, v gs =0v 1 a gate-b ody leakage current i gss v ds =0v, v gs =20v 100 na on cha racteristics (note1) gate-t hreshold voltage v gs(th) v ds =v gs , i d =250a 1.0 1.6 3.0 v v gs =4.5 v, i d =10a 8.2 12 m? static drain-source on-sate resistance r ds(on) v gs =10v, i d =12a 5.5 7.0 m? forwar d transconductance g fs v ds =10v, i d =12a 30 s dynami c characteristics (note 2) input capacitance c iss 1265 output capacitance c oss 600 reverse transfer capacitance c rss v ds =15v,v gs =0v, f =1mhz 130 pf switch ing characteristics (note 2) total gate charge q g 19 gate-so urce charge q gs 2.7 gate-d rain charge q gd v ds =15v, v gs =10v, i d =12a 2.5 nc turn-o n delay time t d (on) 18 turn-o n rise time t r 10 turn-o ff delay time t d(off) 34 turn-o ff fall time t f v dd =15v,i d =12a, v gs =10v,r g =6 10 ns drain- source diode characteristics drain- source diode forward voltage (note1) v sd v gs =0v, i s =12a 0.85 1.2 v contin uous drain-source diode forward current (note3) i s 35 a pulsed drain-source diode forward current i sm 120 a notes: 1 . pulse test : pulse width300s, duty cycle 2%. 2. guaranteed by design, not subject to production. 3. surface mounted on fr4 board, t 10 sec. mosfet electrical characteristics a t =25 unless otherwise specified www.cj-elec.com 2 a-6,oct,2016
typical characteristics 0123456 0 20 40 60 80 100 120 25 50 75 100 125 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 0 200 400 600 800 1000 1200 0.01 0.1 1 10 100 345678910 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 1 01 214161820 0 1 2 3 4 5 6 7 8 9 10 11 12 0.0 0.5 1.0 1 .5 2.0 2.5 3.0 3.5 4.0 0 20 40 60 80 100 120 pulsed duration=80us duty cy cle=0.5%max v dd =5v drain current i d (a) gate to source voltage v gs (v) t r an sf er c h aract eri s t ics t a =25 i d =250ua threshold vol t age threshold voltage v th (v) junction temperature t j ( ) 200 pulsed source current i s (a) source to drain voltage v sd (mv) v sd i s ?? t a =100 t a =25 pulsed i d =12a r ds(on) v gs on-resistance r ds(on) (m ? ) gate to source voltage v gs (v) t a =100 t a =25 v gs =4.5v t a =25 pulsed on-resistance r ds(on) (m ? ) drain current i d (a) i d ?? r ds(on) v gs =10v v gs = 4.0v v gs = 10v v gs = 4.5v v gs = 3.5v pulsed output c haracteristics drain current i d (a) drain to source voltage v ds (v) v gs = 5v www.cj-elec.com 3 a-6,oct,2016
min. max. min . max. a 0.650 0.850 0.026 0.033 a1 a2 d 2.900 3.100 0.114 0.122 d1 2.300 2.600 0.091 0.102 e 2.900 3.100 0.114 0.122 e1 3.150 3.450 0.124 0.136 e2 1.535 1.935 0.060 0.076 b 0.200 0.400 0.008 0.016 e 0.550 0.750 0.022 0.030 l 0.300 0.500 0.012 0.020 l1 0.180 0.480 0.007 0.019 l2 l3 h 0.315 0.515 0.012 0.020 9 13 9 13 0~0.05 0~0.002 symbol dimensions in millimeters dimensions in inches 0.152 ref. 0.006 ref. 0~0.100 0~0.004 0~0.100 0~0.004 www.cj-elec.com 4 a-6,oct,2016
www.cj-elec.com 5 a-6,oct,2016
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